Stacey F. Bent - Associate Chair, Professor

Office: Stauffer III, Room 215
Phone: (650) 723-0385
FAX: (650) 723-9780
E-Mail: bent@stanford.edu
Admin. Associate: Jeannie Lewandowski, (650) 725-3137
Group Website: http://bentgroup.stanford.edu/

Highest Degree

• Ph.D., Stanford University, 1992

Major Honors and Awards

• National Science Foundation CAREER Award, 1995
• Beckman Young Investigator, 1997
• Research Corporation Cottrell Scholar, 1998
• Camille Dreyfus Teacher-Scholar, 1998
• Peter Mark Memorial Award, 2000
• Coblentz Award, 2001
• Fellow of the AVS 2006
• Tau Beta Pi Award for Excellence in Undergraduate Teaching, 2006

Research Area

Our research group works in the areas of semiconductor processing and reactivity, surface science, and materials engineering. A goal of our research is to develop a molecular-level understanding of the complex chemical reactions that drive the processing of materials for electronics and energy applications. Our group carries out both experimental and theoretical studies of semiconductor surface modification and functionalization. We also have a strong effort in atomic layer deposition, ranging from fundamental studies of growth mechanisms to deposition of materials for novel applications. The group’s research emphasizes spatial control of interfacial properties, working toward applications as diverse as area selective atomic layer deposition, renewable energy devices (fuel cells and photovoltaics), and biointerfaces and neural prostheses.

Several Recent Publications

1. “Layer-by-Layer Growth on Ge(100) via Spontaneous Urea Coupling Reactions,” A. Kim, M. A. Filler. S. Kim, S. F. Bent, J. Am. Chem. Soc, 127 (2005) 6123.
2. “Carboxylic acid chemistry at the Ge(100)-2x1 interface: bidentate bridging structure formation on a semiconductor surface,” M. A. Filler, J. Van Deventer, A. Keung, and S. F. Bent, J. Am. Chem. Soc., 128 (2006) 770-779.
3. “Reactivity of the Germanium Surface: Chemical Passivation and Functionalization,” P. W. Loscutoff, S. F. Bent, Annu. Rev. Phys. Chem., 57 (2006) 467-495.
4. “Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification,” R. Chen, H. Kim, P. C. McIntyre, D. W. Porter, S. F. Bent, App. Phys. Lett, 86 (2005) 191910.
5. “Chemistry for positive and negative pattern transfer by area-selective atomic layer deposition,” R. Chen and S. F. Bent, Adv. Mat., 18 (2006) 1086-1090.
6. “Highly stable monolayer resists for atomic layer deposition on germanium and silicon,” R. Chen and S. F. Bent, Chem. Mater., 18 (2006) 3733-3741.
7. “Characterization of polyconjugated thin films synthesized by hot wire chemical vapor deposition of aniline,” G. A. Zaharias, H. H. Shi, and S. F. Bent, Thin Solid Films, 510 (2006) 341-345.
8. “Detecting free radicals during the hot-wire chemical vapor deposition of amorphous silicon carbide films using single-source precursors,” G. A. Zaharias, H. L. Duan, and S. F. Bent, J. Vac. Sci. Technol. A, 24 (2006) 542-549.
9. “Controlling cell adhesion on human tissue by soft lithography,” C. J. Lee, M. S. Blumenkranz, H. A. Fishman, and S. F. Bent, Langmuir, 20 (2004) 4155-4161.
10. “Determination of human lens capsule permeability and its feasibility as a replacement for Bruch's membrane,” C. J. Lee, J. A. Vroom, H. A. Fishman, and S. F. Bent, Biomaterials 27 (2006) 1670-1678.
11. “A model retinal interface based on directed neuronal growth for single cell stimulation,” N. Z. Mehenti, G. S. Tsien, T. Leng, H. A. Fishman, and S. F. Bent, Biomedical Microdevices, 8 (2006) 141-150.

Current Students

Predoctoral Students

• Neville Mehenti—MIT, Chemical Engineering
  Novel interfaces for biomimetic retinal prostheses
• Xirong Jiang—Beijing Normal University, Physics
  Atomic layer deposition and area selective ALD for solid oxide fuel cells
• Paul Loscutoff—U.C. Berkeley, Chemical Engineering
  Molecular layer deposition of ultrathin organic films
• Jessica Kachian—University of Louisiana, Chemical Engineering
  Organic functionalization and passivation of Ge surfaces
• Pendar Ardalan—Sharif University of Technology, Chemical Engineering
  Surface functionalization and atomic layer deposition

Postdoctoral Fellows

• Jeffrey King—Ph.D. Georgia Tech
  Atomic Layer Deposition for nanostructured solar cells; New materials for solar cells